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| Preliminary HFG1N80_Preliminary Aug 2008 BVDSS = 800 V HFG1N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 (Typ.) @VGS=10V RDS(on) typ = 13 ID = 1.0 A TO-92L 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25) * TC=25 unless otherwise specified Parameter Value 800 Units V A A A V mJ A mJ V/ns W W W/ - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed (Note 1) 1.0 0.63 4.0 30 (Note 2) (Note 1) (Note 1) (Note 3) 90 1.0 4.5 4.0 2.5 45 0.36 -55 to +150 300 Power Dissipation (TC = 25) - Derate above 25 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance Characteristics Symbol RJC RJA RJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 2.78 50 110 /W Units * When mounted on the minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,Aug 2008 HFG1N80_Preliminary Electrical Characteristics TC=25 C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 0.5 A 2.5 --13 4.5 16 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------1.0 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---150 20 5.5 195 26 7.2 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 400 V, ID = 1.0 A, RG = 25 -------- 12 40 25 45 7.5 1.2 4.5 30 90 60 100 10.0 --- nC nC nC VDS = 640 V, ID = 1.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 1.0 A, VGS = 0 V IS = 1.0 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------310 0.8 1.0 4.0 1.4 --A V C Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=170mH, IAS=1.0A, VDD=50V, RG=25, Starting TJ =25C 3. ISD1.0A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Aug 2008 |
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